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在量子阱半导体激光器中,量子尺寸引起的衍射效应使半导体激光器的光束质量很差。分别限制结构的垂直结平面发散角在40°左右,使得光束整形系统比较复杂,限制了半导体激光器的直接应用。为解决这一问题,提出了降低垂直结平面发散角的要求。回顾了小发散角半导体激光器的技术发展及应用,对具有小发散角的模式扩展波导结构进行了理论模拟和实验验证,获得了优化的结构。采用MOCVD外延技术生长了外延片,制作了高峰值功率脉冲激光器,获得了快轴发散角小于25,°峰值功率大于80W的半导体激光器,在激光引信应用中获得良好效果。
In quantum well semiconductor lasers, the diffraction effect due to quantum size makes the beam quality of semiconductor lasers poor. Respectively limit the structure of the vertical junction plane divergence angle of about 40 °, making the beam shaping system is more complicated, limiting the direct application of semiconductor lasers. In order to solve this problem, the requirement to reduce the divergence angle of the vertical junction plane is proposed. The technical development and application of small divergence angle semiconductor lasers are reviewed. Theoretical simulation and experimental verification of mode extended waveguide structures with small divergence angle are carried out. The optimized structure is obtained. The epitaxial wafer was grown by MOCVD epitaxy and a high power pulse laser was fabricated. The semiconductor lasers with fast axis divergence less than 25 ° and peak power more than 80W were obtained, which achieved good results in the application of laser fuze.