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用350～450℃低温射频溅射后再用CO_2连续激光退火处理的方法,在铂箔和硅片上制备了铁电性能相当好的PbTiO_2薄膜。已发观,被辐照区从顺电相向铁电相转变的相变很明显,而邻近区并无温升。用瞬态深能级谱(DLTS)方法研究了激光退火时用PbTiO_3膜作MOS结构的硅-二氧化硅界面电子态的影响,并且发现,SiO_2上的铂电极对于避免界面附近电子态的劣化是有效的。
The PbTiO_2 thin films with good ferroelectric properties were prepared on platinum foil and silicon wafer by low temperature RF sputtering at 350-450 ℃ followed by continuous laser annealing of CO 2. It has been observed that the phase transition from the paraelectric phase to the ferroelectric phase in the irradiated area is obvious, while there is no temperature rise in the adjacent area. The influence of the PbTiO_3 film on the Si-Si interface electronic states of the MOS structure during laser annealing was studied by the transient deep level spectrum (DLTS) method. It was also found that the Pt electrode on SiO_2 can avoid the deterioration of the electronic states near the interface It is effective.