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用砷(100keV,10~(15)/cm~2)注入到<100>硅中后用扫描电子束退火,得到的主要结果为:(1)经电子束退火后样品的电激活率与把样品控制在连续激光退火,或者分别在575℃和1000℃每次30分钟的热退火,所得到的电激活率是一样的。(2)注入层的再结晶用MeV离子沟道和透射电子显微镜(TEM)测量,确定是完整的。(3)用氧化剥层和范德堡尔法测量得到的电子分布表明,注入后的原子并未发生再扩散。与扫描连续激光退火得到的结果基本一致。
The main results obtained by injecting arsenic (100 keV, 10-15 / cm ~ 2) into <100> silicon after scanning electron beam annealing are as follows: (1) the ratio of the electrical activation of the sample after electron beam annealing to Sample control In continuous laser annealing, or thermal annealing at 575 ° C and 1000 ° C for 30 minutes each, the resulting electrical activation is the same. (2) Recrystallization of the implanted layer was confirmed by measurement with MeV ion channel and transmission electron microscope (TEM). (3) The electron distribution measured by the oxide stripping and the Vanderbilt method shows that the injected atoms did not re-diffuse. The results obtained by scanning continuous laser annealing are basically the same.