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一、引言近年来,我国在半导体硅(锗)探测器的制作和应用方面越来越普遍。这种器件之所以获得迅速进展,主要是用起来很方便。并且,在性能上与早期在核物理实验中所一直延用的探测器件相比,有其独到之处。如在一定能量范围内分辨率高,脉冲上升时间短和线性非常好,等等。目前国际上对这种器件的研究也很时兴。我们实验室主要制备硅面垒型探测器(磷扩散型器件过去也做过)。N型硅材料是由本所自己制备的。一般材料的电阻率在几百到几千欧姆·厘米之间,位错浓度约为10V厘米~2,载流子寿命约在几十到几百微秒之间,器件的面积一般约为40—80毫米~2,最大的有效面积可达200—300毫米~2。用这种器件测得的分辨率(对于Po~(210)α源)最好的约为0.47—0.57%。空间电荷层厚度可达600微米以上。
I. INTRODUCTION In recent years, China has become more and more common in the fabrication and application of semiconductor silicon (germanium) detectors. The rapid progress of this device is mainly easy to use. What’s more, it has its unique characteristics compared to the detector devices that have been used in early nuclear physics experiments. Such as high resolution in a certain energy range, pulse rise time is short and linear is very good, and so on. The current international research on this device is also very fashionable. Our laboratory mainly produces silicon surface barrier detectors (phosphorus diffusion devices have also been done in the past). N-type silicon material is made by our own. The resistivity of typical materials is between a few hundred and a few thousand ohms centimeters, the dislocation concentration is about 10 V cm-2, the carrier lifetime is between a few dozen and a few hundred microseconds, and the device area is generally about 40 -80 mm ~ 2, the largest effective area of up to 200-300 mm ~ 2. The resolution measured by this device (for the Po ~ (210) alpha source) is preferably about 0.47-0.57%. Space charge layer thickness up to 600 microns or more.