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提出了使用Ga-AsCl_3-H_2和 GaAs-AsCl_3-H_2系统的新的汽相生长方法。这些方法使用的装置与通常的 Ga-AsCl_s-H_2系统的基本相同,但是源和衬底保持相同的温度。在 Ga-AsCl_3H_2系统中的生长是基于低温下(<800℃)一氯化镓和通过金属镓的砷的反应。研究了温度、氢气流速和气体组分对生长速率的影响。在 GaAs-AsCl_3-H_2系统中生长是基于低温(<700℃)下砷化镓同三氯化砷的反应。讨论了反应温度、氢气流速、气体组分以及衬底的位置对砷化镓源的输运速率和外延层的生长速率的影响。对于这两种系统的反应机理也进行了讨论。
A new vapor phase growth method using Ga-AsCl 3 -H 2 and GaAs-AsCl 3 -H 2 systems is proposed. The devices used in these methods are basically the same as the conventional Ga-AsCl_s-H 2 system, but the source and the substrate are kept at the same temperature. The growth in the Ga-AsCl 3 H 2 system is based on the reaction of gallium monochloride with arsenic through metallic gallium at low temperatures (<800 ° C.). The effects of temperature, hydrogen flow rate and gas composition on the growth rate were investigated. Growth in the GaAs-AsCl 3 -H 2 system is based on the reaction of gallium arsenide with arsenic trichloride at low temperatures (<700 ° C). The effects of reaction temperature, hydrogen flow rate, gas composition and substrate position on the transport rate of gallium arsenide and the growth rate of the epitaxial layer are discussed. The reaction mechanism of these two systems is also discussed.