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本文报道了一种用电子束蒸发制备铟基金属与ｎ型ＧａＡｓ单晶欧姆接触ＮｉＩｎ（Ｇｅ）／ｎ－ＧａＡｓ材料．其接触电阻率ρｃ对随后的热退火温度存在着典型的Ｕ型依赖关系．透射电子显微镜（ＴＥＭ）及俄歇电子能谱（ＡＥＳ）的分析结果指出ρｃ值的大小很大程度取决于ＧａＡｓ衬底与金属接触材料间ＩｎＧａＡｓ相的形成及其覆盖度．文中还对金属接触材料与砷化镓相互作用的动力学进行了讨论．
In this paper, a novel ohmic contact NiIn (Ge) / n-GaAs material containing indium-based metal and n-type GaAs was prepared by electron beam evaporation. The contact resistivity ρc has a typical U-dependence on the subsequent thermal annealing temperature. The results of transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) indicate that the value of ρc depends largely on the formation and coverage of InGaAs phase between the GaAs substrate and the metal contact material. The kinetics of the interaction between metal contact material and gallium arsenide is also discussed.