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溅射沉积由于获得的cBN薄膜颗粒尺寸小、立方相含量高,是cBN薄膜制备技术发展的一个重要方向。本文介绍了溅射沉积过程中的基体负偏压、沉积气氛、沉积温度、靶材功率等工艺参数对cBN薄膜中立方相的含量和薄膜性能的影响规律。并从优化沉积工艺参数、采用过渡层及在膜层中引入其它元素方面介绍了在降低膜层应力方面取得的研究进展。分析归纳出溅射沉积cBN薄膜目前存在的主要问题是薄膜应力过大、存在非立方相氮化硼及B、N原子的比例失配。提出了下一步研究工作的重点是通过深入认识溅射沉积cBN薄膜的的形成机理,优化沉积工艺参数及设计合理的过渡层和新型梯度涂层,以提高立方相的含量、保证B、N原子的比例、降低膜层应力。
Sputtering deposition due to the small size of the cBN film obtained particles, cubic phase content is high, cBN film preparation technology is an important direction. In this paper, the influences of substrate negative bias, deposition atmosphere, deposition temperature, target power and other parameters on the content of cubic phase and the properties of thin films during sputtering deposition are introduced. The research progress in reducing the stress of the film is also introduced in terms of optimizing the deposition process parameters, adopting the transition layer and introducing other elements into the film. It is concluded that the main problem of sputtered cBN thin films is that the stress of the thin films is too large. There is a proportional mismatch between the non-cubic boron nitride and B and N atoms. The key point of the next research work is to understand the formation mechanism of the sputtered cBN thin film, optimize the deposition process parameters and design a reasonable transitional layer and a new gradient coating to improve the cubic phase content and ensure that B, N atoms Of the proportion, reduce the film stress.