论文部分内容阅读
本文主要对两种不同的常规工艺条件下制备的短沟道ＣＭＯＳ器件在室温和液氮温区的场效应迁移率、跨导、亚阈和高频特性进行比较和分析，结果发现ＨＣＭＯＳⅡ型ＰＭＯＳ管在７７Ｋ下的工作特性比ＨＣＭＯＳⅠ型的好，而相应的ＮＭＯＳ管特性却变得很差，这主要是由于电离杂质散射增强的缘故。为此我们提出一种既适于室温工作又能在液氮温区充分发挥优点的新型短沟道ＣＭＯＳ器件。
In this paper, the field-effect mobility, transconductance, sub-threshold and high-frequency characteristics of short-channel CMOS devices fabricated under two different conventional process conditions are compared and analyzed at room temperature and liquid nitrogen temperature. The results show that the HCMOS II PMOS The performance of the tube at 77K is better than that of HCMOS type I, and the corresponding NMOS tube characteristics are poor, mainly due to the enhanced scattering of ionized impurities. To this end, we propose a new short-channel CMOS device that is suitable for both room temperature and liquid nitrogen temperature.