论文部分内容阅读
我们分别通过直流反应溅射及脉冲激光淀积法制备了ZnO多晶薄膜。X射线衍射结果显示出薄膜的c轴取向。原子力显微镜证实薄膜的多晶结构。两种方法制备的ZnO在光子激发下都发射较强的带边荧光。绿色荧光未被观察到。激光淀积在(001)硅表面的ZnO的发光源自“自由激子”辐射。激光淀积在(0001)氧化铝晶体表面的ZnO的发光机制则在相当宽的激发强度范围内都呈现出电子空穴等离子体(electron holeplasma)的复合特性。
We prepared ZnO polycrystalline thin films by DC reactive sputtering and pulsed laser deposition respectively. X-ray diffraction results show the c-axis orientation of the film. Atomic force microscopy confirmed the polycrystalline structure of the film. ZnO prepared by both methods emit strong edge fluorescence under photon excitation. Green fluorescence is not observed. The ZnO luminescence laser deposited on the (001) silicon surface originates from “free exciton” radiation. The ZnO emitting mechanism by laser deposition on the surface of (0001) alumina crystal shows the recombination properties of electron holeplasma over a wide range of excitation intensities.