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固态功率控制器或固体继电器逐步向大功率方向发展,其结温测量与监控成为工程应用中的难题,针对这类具有输入输出隔离功能的器件,采用等功率结温测试法研究了基于MOSFET的功率控制器结温无损伤测量技术。利用MOSFET自身结构,通过研究寄生pn结电压随温度变化规律、器件正向功率和反向功率关系、等功率结温测试与实际结温测试结果对比,提出了适用于工程应用的结温无损伤测量方法。结果表明,采用本方法测试结温准确度在1%以内,并可有效避免器件时间差、测试时间差等问题,可实现多层结构、非气密结构等传统方法难以实现的结温测量,具有良好的工程应用价值。
Solid-state power controllers or solid state relays are gradually developing towards high power. The measurement and monitoring of junction temperature has become a difficult problem in engineering applications. For such devices with input and output isolation functions, the power-based junction temperature test Power controller junction temperature without damage measurement techniques. By using the structure of the MOSFET itself, the relationship between the parasitic pn junction voltage and the temperature, the relationship between the forward power and the reverse power of the device, the power junction temperature test and the actual junction temperature test are compared. Measurement methods. The results show that the proposed method can be used to test junction temperature accuracy within 1%, and can effectively avoid the device time difference, test time difference and other issues, can achieve multi-layer structure, non-hermetic structure and other traditional methods difficult to achieve the junction temperature measurement, with good Engineering application value.