利用射频磁控反应溅射法,以高纯S i为靶材,高纯N2气为反应气体,在S i衬底上制备出了S i3N4薄膜,研究了气体流量比对薄膜质量的影响。结果表明,薄膜的沉积速率主要与气体的流量比有关,随着气体流量比的增加,沉积速率下降,靶面的溅射由金属模式过渡到氮化物模式;薄膜中N/S i的原子比增加;红外吸收谱的S i-N键的振动峰向标准峰逼近。 Using RF magnetron reactive sputtering method, high purity Si was taken as target material and high purity N2 gas was used as reactant gas. S i3N4 thin film was prepared on Si substrate. The influence of gas flow ratio on the film quality was studied. The results show that the deposition rate of the film is mainly related to the gas flow ratio. With the increase of the gas flow rate, the deposition rate decreases and the sputtering of the target surface changes from the metal mode to the nitride mode. The atomic ratio of N / Increase; infrared absorption spectrum of the S iN bond vibration peak approaching the standard peak.