对新的宽带通信应用和设备有着很多期望。要达到这些预期,制造商必须开发新的集成电路工艺,继续将电路性能推向更高,并使每千兆位的总成本更低。宽带通信有其独特的特性,这些特性要求已将传统CMOS工艺推向其极限,并推动了寻找新材料的竞赛,这些新材料将为高频应用提供更佳的功能,但却保持可制造性、和成本效益高的大生产所需要的性能。几种有希望的新材料是砷化镓(GaAs)、磷化铟(InP)和锗化硅(SiGe), There are many expectations for new broadband communications applications and devices. To meet these expectations, manufacturers must develop new integrated circuit technologies that continue to push circuit performance even higher and lower the total cost per gigabit. Broadband communications have their own unique features that demand that traditional CMOS processes have been pushed to their limits and have driven a race to find new materials that will provide better functionality for high frequency applications but maintain manufacturability , And the performance required for cost-effective large production. Several promising new materials are GaAs, InP and SiGe,