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日前瑞萨科技公司宣布开发出LFPAK-Ⅰ(无损耗封装-倒装型)上表面散热型封装,作为新的功率MOSFET封装形式,它通过使用顶面安装热沉大大提高了散热特性,通过使用上表面散热结构提高了电流能力。作为初始阶段产品,现在正发布3种服务器DC-DC电源稳压器(VR)功率MOSFET:HAT2165N、HAT2166N和HAT2168N,从2004年7月在日本开始样品发货。这种新封装的特性如下: ◆与瑞萨科技以前的封装相比,安装散热热阻值减小了40％,电流容量大约提高了30％。 LFPAK-Ⅰ使用一种管芯散热管座暴露在封装上表面的结构,与瑞萨科技目前通过印刷线路板
Renesas Technology Corp. today announced the development of an LFPAK-I (lossless package-flip chip) top-surface-mount package as a new power MOSFET package that greatly improves heat dissipation through the use of top mounted heat sinks. The upper surface heatsink structure improves current capability. As an initial stage product, three types of server DC-DC power supply voltage regulator (VR) power MOSFETs are now being released: HAT2165N, HAT2166N and HAT2168N, which are sampling from Japan in July 2004. This new package features the following: ◆ Compared with the previous Renesas Technology package, the installed thermal resistance is reduced by 40% and the current capacity is increased by about 30%. LFPAK-I uses a die heat sink header exposed on the package surface structure, and Renesas Technology currently through the printed circuit board