论文部分内容阅读
研究了热处理对亚微米晶格匹配和应变的ＩｎＡｌＡｓ／ＩｎＧａＡｓ亚微米ＨＥＭＴ的影响。发现直流特性变差。Ｉ＿（ＤＳＳ）２９９ｍＡ／ｍｍ减到１８２ｍＡ／ｍｍ，Ｇ＿ｍ从５１３ｍＳ／ｍｍ减至２０９ｍＳ／ｍｍ，还测量出了微波参数的降低。ｆ＿Ｔ和ｆ＿（ｍａｘ）分别减少超过３０％和２０％，一些证据表明，由于在沟道／缓冲层界面和内部额外陷阶的存在而引起的变化是导致这种参数改变的原因。测量出的欧姆接触电阻率从０．１９Ωｍｍ曾加至０．２６Ωｍｍ。在一种测试样品中，所有器件的欧姆接触周围都形成了凝聚物，ＸＥＤＳ分析表明，它们中含有Ｇｅ，Ｎｉ和Ｏ。
The effects of heat treatment on submicron lattice matching and strain in InAsAs / InGaAs submicron HEMTs were investigated. DC characteristics found to be worse. The DSS 299 mA / mm was reduced to 182 mA / mm, the Gm was reduced from 513 mS / mm to 209 mS / mm, and the decrease in microwave parameters was also measured. f_T and f_max decrease by more than 30% and 20%, respectively, and some evidence suggests that changes due to the presence of extra traps at the channel / buffer interface and inside are responsible for this parameter change. The measured ohmic contact resistivity increased from 0.19Ωmm to 0.26Ωmm. In one test sample, all devices formed aggregates around the ohmic contacts, and XEDS analysis showed that they contained Ge, Ni, and O.