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以三氯甲基硅烷 (MTS)为原料 ,在无水蒸气和有水蒸气加入的条件下采用化学气相沉积 (CVD)法制备出Si C块体材料。在 95 0～ 12 0 0℃的范围内 ,水蒸气在水温 2 0～ 80℃时由 Ar鼓泡引入反应器中进行沉积 ,得到的产物基本属 β- Si C,其中混有少量的二氧化硅。结果表明 ,无水蒸气时 Si C的沉积速率随沉积温度升高而略有升高 ;通入水蒸气后 Si C的沉积速率有所提高 ,当水蒸气的引入温度为 2 0℃、沉积温度为 10 5 0℃时 ,沉积速率最大达到 0 .9mm/h;随水蒸气引入量的增加 ,Si C的沉积速率呈降低趋势。对沉积反应的机理进行了初步分析。
SiC bulk material was prepared by chemical vapor deposition (CVD) using trichloromethylsilane (MTS) as a raw material under the condition of no water vapor and water vapor. In the range of 95 0-1200 ° C, water vapor is introduced into the reactor by Ar bubbling at a water temperature of 20-80 ° C for deposition, and the product obtained is essentially β-Si C mixed with a small amount of dioxygen silicon. The results show that the deposition rate of Si C increases slightly with the increase of deposition temperature in the absence of water vapor. The deposition rate of Si C increases with the introduction of water vapor. When the introduction temperature of water vapor is 20 ℃, the deposition temperature is The maximum deposition rate reached 0. 9 mm / h at 10 5 0 ℃. With the increase of water vapor introduction, the deposition rate of Si C decreased. The mechanism of deposition reaction is analyzed preliminarily.