,A Transition from Eutectic Growth to Dendritic Growth Induced by High Undercooling Conditions

来源 :中国物理快报(英文版) | 被引量 : 0次 | 上传用户:DIWUTANG
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
Cu-8 wt.%Al eutectic alloy was undercooled by up to 187K (0.14 TE) using a drop tube technique. The crystal growth and phase selection mechanisms were investigated during containerless rapid solidification. It is found that the microstructural morphology is characterized by lamellar eutectic growth at small undercoolings. However,if the liquid alloy is undercooled by more than 25K, eutectic growth will be suppressed completely and the dendritic growth of (Gu) solid solution dominates its solidification process. When the undercooling exceeds 153 K, a microstructural transition from coarse dendrite to equiaxed dendrite takes place.
其他文献
特色数据库建设是图书馆数字化建设的必然选择,是图书馆特色化发展的必由之路。本文从少年儿童特色数据库建设的必要性、特点、模型、技术和工具以及需要把握的问题等方面,结
The formation of infrared femtosecond laser induced colour centres was observed in Tb3+-doped and Tb3+ /Ce3+-codoped heavy germanate glasses.A rectangular scan
期刊
The effects of the ambient pressure Pambient on the bubble characteristics of pulsed discharge in water are investigated. The simulation results show that, when
期刊
The steady state formed by the diffusion of plasma particles in an inhomogeneous dusty plasma is investigated theoretically and compared with our previous exper
期刊
铝电解过程的数学模型具有多变量,非线性特点,难以用一般物理及化学的已知规律来描述,而且还没有恰当的测试手段,至今尚无法确定精确的数学模型,模糊(FUZZY)控制技术解决这类
The double heterostructure GaN/InGaN/GaN films with different thicknesses of the InGaN layer were grownat 780℃ or 800℃ by metal organic chemical vapour deposi
期刊
We have grown high density Co dusters with a narrow-sized distribution on the Si3N4(0001)-(8 × 8) surface. In the submonolayer regime, Co clusters tend to keep
期刊
好的工匠就是在你觉得没有必要的地方下功夫,当人们在不经意间发现制作者这种对于细节的专注时,就会肃然起敬。一款优秀的自媒体产品,离不开自媒体人对产品精益求精的执着追
We simulate the two-dimensional patte formation in surfactant-mediated epitaxy using a kinetic model, in which the nucleation and growth of the stable islands a
期刊
Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution.
期刊