以金属 Zr 作靶,7059玻璃、硅片作基板,利用对向二极型 RF(射频)磁控管喷镀装置制备 Zr-N薄膜。将喷镀室抽空至10~(-7)mmHg 后,导入 Ar 气进行预喷镀,然后停止导人 Ar 气再抽高真空。之后,按所定气压导入喷镀气体 N_2气,通过改变 RF 功率而 Using Zr metal as target, 7059 glass and silicon wafer as substrate, a Zr-N thin film was prepared by using a polarized RF (radio frequency) magnetron sputtering device. The chamber was evacuated to 10 ~ (-7) mmHg, the introduction of Ar gas pre-plating, and then stop Ar gas guide and then pumping high vacuum. After that, the sputtering gas N 2 gas was introduced at a predetermined gas pressure and the RF power was changed