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采用飞秒激光光谱技术研究了ＬＴ－ＧａＡｓ受激载流子的超快弛豫特性，讨论了载流子散射、载流子－声子互作用和缺陷捕获对载流子弛豫特性的贡献，测定载流子的捕获时间约为５００ｆｓ，并发现其随载流子的过超能量减少而增加
The femtosecond laser spectroscopy was used to study the ultrafast relaxation behavior of LT-GaAs excited carriers. The contribution of carrier scattering, carrier-phonon interaction and defect capture to the relaxation of carriers was discussed , The carrier capture time was determined to be about 500 fs and it was found that it increases with the decrease of carrier excess energy