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为了实现在微尺度范围内有机半导体的取向生长,提出了一种基于不对称金-石墨烯电极的底接触有机薄膜晶体管器件结构。半导体前驱体溶液在不同衬底上表现出的不同接触角将打破液体/空气界面处的表面张力与表面能的总体平衡,形成马兰戈尼流并促使溶液在低润湿性的石墨烯电极表面的接触线快速后退。实验结果表明,基于这种不对称电极制备的底接触有机薄膜晶体管(OTFT)阵列的平均迁移率显著提升,达到常规对称结构器件的2倍,同时器件迁移率的相对标准差从53%下降到33%。该不对称器件结构实现了半导体薄膜在器件沟道处的取向生长,从而提高了器件迁移率与均匀性。
In order to achieve the orientation growth of organic semiconductors in the microscale range, a bottom-contact organic thin film transistor device structure based on an asymmetric gold-graphene electrode was proposed. The different contact angles exhibited by the semiconductor precursor solution on different substrates will break the overall balance of surface tension and surface energy at the liquid / air interface to form a Marangoni stream and cause the solution to migrate on the low-wettability graphene electrode surface The contact line quickly back. The experimental results show that the average mobility of the bottom-contact organic thin-film transistor (OTFT) array fabricated based on this asymmetric electrode is significantly increased to twice that of the conventional symmetric structure device and the relative standard deviation of the device mobility is reduced from 53% 33%. The asymmetric device structure enables the directional growth of the semiconductor film at the channel of the device, thereby improving device mobility and uniformity.