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本文叙述用解理法则外延层厚度的工艺及原理。所则得的外延层厚度与穿通二极管的穿通电压对应较好。本文还推荐一种在我们工作中摸索出的新染色剂,此种染色剂(我们称微铬酸染色剂)显示p-n结方便可靠,显示时间的宽容性强,显示的p-n结边缘清晰。
This paper describes the use of cleavage law epitaxial layer thickness of the technology and principles. The resulting epitaxial layer thickness and through the diode punch-through voltage is better. This article also recommends a new stain that has been worked out in our work. This stain (called a chromic acid stain) shows a convenient and reliable p-n junction with a high tolerance of time and a clear edge of the p-n junction.