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采用不同钝化工艺制备了一系列具有不同P/A比的变面积光电二极管器件.在77~147 K温度范围对器件R_0A和1 000/T关系进行了分析,结果表明在该温度区间器件暗电流主要以扩散电流占主导.对器件的R_0A分布进行了研究,77 K下HgCdTe薄膜内的体缺陷及非均匀性对器件性能产生了重要的影响;127 K下由于体扩散电流增加,缺陷对器件的作用显著弱化.77 K和127 K下器件R_0A随P/A比增大而减小,表明表面效应对器件具有重要的影响.基于Vishnu Gopal模型对器件1/R_0A值和P/A关系进行了拟合分析,证实了器件存在较大的表面漏电现象,且通过表面钝化工艺的改进,有效减小了表面效应对器件性能的影响.
A series of different area P / A photodiode devices with different P / A ratios were fabricated by different passivation techniques.The relationship between the device R_0A and 1 000 / T was analyzed in the temperature range of 77 ~ 147 K. The results show that the device dark The current mainly dominated by the diffusion current.The R_0A distribution of the device was studied. The bulk defects and inhomogeneities in the HgCdTe film at 77 K had an important effect on the device performance. Due to the increase of bulk diffusion current at 127 K, The effect of the device is significantly weakened.The R_OA of devices at 77 K and 127 K decreases with the increase of P / A ratio, indicating that the surface effect has an important effect on the device.According to Vishnu Gopal model, the relationship between device 1 / R_OA value and P / A Fitting analysis was carried out to confirm that the device has a large surface leakage phenomenon, and through the improvement of the surface passivation process, the effect of the surface effect on the device performance is effectively reduced.