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为了提高在硅基上外延砷化镓薄膜的质量和实验的可重复性,我们提出了一种叫做四步生长法的新方法,该方法是通过在低温成核层和高温外延层中间先后插入低温缓冲层和高温缓冲层实现的。通过此方法,可以制备出表面具有单畴结构、在强白光下依然光亮如镜、粗糙度低且缺陷少的高质量砷化镓薄膜,而且此方法的重复性很好。即便没有任何生长后的退火处理,外延出的1μm厚砷化镓薄膜在5μm×5μm扫描区域内的表面粗糙度只有2.1 nm,且由X射线双晶衍射测试出的砷化镓(004)峰的半高宽只有210.6 arcsec。
In order to improve the quality and experimental reproducibility of the epitaxial gallium arsenide thin film on silicon, we propose a new method called the four-step growth method, which is achieved by inserting one after the other between the low temperature nucleation layer and the high temperature epitaxial layer Low temperature buffer layer and high temperature buffer layer. By this method, high-quality gallium arsenide thin films with a single domain structure on the surface and still bright as a mirror under strong white light with low roughness and few defects can be prepared, and the repeatability of the method is good. Even without any post-growth anneal, the surface roughness of the epitaxial 1 μm thick gallium arsenide film in the 5 μm × 5 μm scan area was only 2.1 nm, and the gallium arsenide (004) peak as measured by X-ray twin crystal diffraction The half-width is only 210.6 arcsec.