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本文研究了直拉硅单晶的氧内吸杂(IG)工艺中,单晶的碳含量对缺陷形成的影响.实验表明,碳含量较高的硅片虽然在750℃热处理时,氧的沉淀速率较高,但是经IG处理后,硅片体内仅观条到较少的缺陷.本文详细地研究了导致上述现象的原因,指出碳含量较高的硅片,在750℃处理时氧、碳同时沉淀,并以C-O复合体的形式存在.但是该类氧沉淀在高于900℃,将因分解而消失,因此对IG 硅片中缺陷的形成没有贡献.本文提供了有关实验结果,指出450℃下形成的SiO_x复合团,是IG硅片体内缺陷的主要成核部位.碳含量对低温形成SiO_x复合团的抑制作用,是高碳含量硅片在IG处理中,仅形成较少缺陷的直接原因.
In this paper, the effect of monocrystalline carbon content on the defect formation was investigated in the oxygen-doped IG process of Czochralski silicon single crystal.The experiment shows that although the silicon with high carbon content heat treatment at 750 ℃, the oxygen precipitation However, after IG treatment, only a few defects were observed in the bulk of the wafers.This paper studied in detail the reasons leading to the above phenomenon, and pointed out that when the carbon content is high, Precipitates and exists in the form of CO complex, but this kind of oxygen precipitation will disappear by decomposition when it is above 900 ℃, so it does not contribute to the formation of defects in IG wafers.This paper provides the relevant experimental results and points out that 450 ℃, the SiO_x complex is the main nucleation site of defects in IG wafers.The carbon content can inhibit the formation of SiO_x complex at low temperature, and it is the direct formation of fewer defects in high carbon content wafers during IG treatment the reason.