论文部分内容阅读
On the basis of a detailed discussion of the development of total ionizing dose(TID) effect model,a new commercial-model-independent TID modeling approach for partially depleted silicon-on-insulator metal-oxidesemiconductor field effect transistors is developed.An exponential approximation is proposed to simplify the trap charge calculation.Irradiation experiments with ~(60)Co gamma rays for IO and core devices are performed to validate the simulation results.An excellent agreement of measurement with the simulation results is observed.
On the basis of a detailed discussion of the development of total ionizing dose (TID) effect model, a new commercial-model-independent TID modeling approach for partially depleted silicon-on-insulator metal-oxide semiconductor field effect transistors is developed. An exponential approximation is proposed to simplify the trap charge calculation. Irradiation experiments with ~ (60) Co gamma rays for IO and core devices are validated the simulation results. An excellent agreement of measurement with the simulation results is observed.