论文部分内容阅读
,The electrical characteristics of a 4H-silicon carbide metal-insulator-semiconductor structure with
【机 构】
：
School of Microelectronics, Xidian University, Xi’an 710071, China “,”Key Laboratory of Wide Band Ga
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2011年12期
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