本文研究了采用VHF PECVD技术制备的微晶硅薄膜的纵向均匀性。喇曼测试结果显示 :微晶硅薄膜存在着生长方向的结构不均匀 ,随厚度的增加 ,材料的晶化率逐渐变大 ;不同衬底其非晶孵化点是不一样的 ,对于同一种衬底 ,绒度大相应的晶化率就大 ,对应着孵化层的厚度小 ;AFM测试结果明显的给出 :材料的结构随厚度增加发生变化 In this paper, the longitudinal uniformity of microcrystalline silicon thin films prepared by VHF PECVD technique is studied. The results of Raman test show that the microcrystalline silicon film has an uneven structure in the growth direction. With the increase of the thickness, the crystallization rate of the material gradually becomes larger. The amorphous substrate has a different incubation point for different substrates. For the same type of substrate, At the end, the velvet degree corresponding to a large crystallization rate, corresponding to the thickness of the hatching layer is small; AFM test results clearly given: the material structure changes with increasing thickness