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应用不同频率的YAG激光分别对单晶硅及多晶硅衬底上的非晶硅薄膜进行了退火处理。晶化后的非晶硅薄膜的物相结构和表面形貌用XRD和AFM进行分析。XRD测试结果表明:随着激光频率的增加,两种衬底上的非晶硅薄膜晶化晶粒尺寸均出现了先增加后降低的现象。所有非晶硅样品的衍射峰位与衬底一致,说明非晶硅薄膜的晶粒生长是外延生长。从多晶硅衬底样品的XRD可以看出,随着激光频率的增加,激光首先融化衬底表面,然后衬底表层与非晶硅薄膜一起晶化。非晶硅薄膜最佳晶化激光频率分别为:多晶硅衬底20Hz,单晶硅衬底10Hz。
The amorphous silicon thin films on single crystal silicon and polycrystalline silicon substrates were annealed with different frequency of YAG laser. The phase structure and surface morphology of the crystallized amorphous silicon thin film were analyzed by XRD and AFM. XRD results show that with the increase of the laser frequency, the grain sizes of the amorphous silicon films on the two substrates increase first and then decrease. The diffraction peaks of all amorphous silicon samples are consistent with the substrate, indicating that the grain growth of the amorphous silicon film is epitaxial growth. From the XRD of the polysilicon substrate sample, it can be seen that as the laser frequency increases, the laser firstly melts the substrate surface, and then the substrate surface is crystallized with the amorphous silicon film. The optimum crystallization frequency of amorphous silicon thin film are: 20Hz of polycrystalline silicon substrate and 10Hz of monocrystalline silicon substrate.