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本文提出了氦载气熔化-气相色谱法(镍-锡熔池方案)测定硅中微量氧。采用镍-锡熔池时硅中定氧的温度可低于与碳直接接触的空坩埚无浴法。由于改进了实验条件和使用了小型裸体石墨坩埚,降低了气体分析的空白(<0.1μg氧),并提高了分析结果的重现性。分析温度1650～1700℃,抽取时间5分钟,每个坩埚可以分析4个样品。用此法可测定ppm级硅中氧。用本法建立了9μ红外吸收法测定硅单晶中氧标定曲线。
In this paper, the determination of trace oxygen in silicon by helium carrier gas melting-gas chromatography (nickel-tin bath solution) is proposed. When nickel-tin bath is used, the temperature of oxygen in the silicon can be lower than the empty crucible without direct contact with carbon. Due to the improved experimental conditions and the use of a small nude graphite crucible, the gas analysis blank (<0.1 μg oxygen) was reduced and the analytical reproducibility was improved. Analysis of temperature 1650 ~ 1700 ℃, extraction time of 5 minutes, each crucible can analyze 4 samples. This method can be used to determine oxygen in ppm grade silicon. Using this method to establish a 9μ infrared absorption method for determination of oxygen calibration curve in silicon single crystal.