论文部分内容阅读
位置敏感探测器(PSD)的响应时间直接影响其动态探测入射光位置的准确性。分析了电势堆积现象,以四边形二维PSD为例,建立了PSD响应时间的仿真模型,分析了对响应时间的影响因素。结果表明,PSD响应时间随着光敏面大小、p型层电阻值以及级间电容的增大而同比例增大;在PSD器件的结构参数和物性参数不变的情况下,光源入射能量与器件的响应时间无关。
The response time of a position sensitive detector (PSD) directly affects the accuracy of its dynamic detection of incident light position. The phenomenon of potential accumulation is analyzed. Taking the quadrilateral PSD as an example, a simulation model of PSD response time is established, and the influencing factors on the response time are analyzed. The results show that PSD response time increases proportionally with the increase of photosensitive layer surface area, p-type layer resistance and interstage capacitance. When the structure parameters and physical parameters of PSD device are the same, Response time has nothing to do.