低温下,在蓝宝石图形衬底上使用金属有机化学气相沉积(MOCVD)生长低温GaN(LT-GaN)缓冲层,并对其表面形貌进行了细致的观察,发现了不同于已报道的GaN选择性成核生长现象。基于不同厚度的低温GaN缓冲层生长了n型GaN(n-GaN),发现过厚或者过薄的缓冲层都会对n-GaN晶体质量产生负面影响,并结合初始成核阶段进行了原因分析。制备了基于不同厚度的n-GaN的发光二极管(LED)样品,分析了GaN晶体质量对LED输出功率的影响。同时发现,晶体质量较差的时候,光提取效率可能主导着对LED器件性能的影响。 At low temperature, a low temperature GaN (LT-GaN) buffer layer was grown on a sapphire patterned substrate by metal organic chemical vapor deposition (MOCVD) and its surface morphology was carefully observed. It was found that unlike the reported GaN selection Sexual nucleation and growth phenomenon. Based on the different thickness of low-temperature GaN buffer layer grown n-GaN, found too thick or too thin buffer layer will have a negative impact on the quality of n-GaN crystal, and combined with the initial nucleation stage of the cause analysis. The samples of n-GaN based LEDs with different thicknesses were fabricated and the effects of GaN crystal quality on LED output power were analyzed. Also found that the poor quality of the crystal, the light extraction efficiency may dominate the LED device performance.