前言本文从设计的角度提出了确定最优化薄膜电致发光(TFEL)器件结构的设计规则,给出了其材料特性(包括发光物质的优值系数)和半导体驱动器的驱动能力。本文还详细说明了选通象素的发光亮度,最大驱动电压和电流,以及由于列电极损耗导致的可允许的非均匀性,虽然不能确定最佳的一组薄膜厚度,但它们可以提供给我们一组限制条件。在这些限制条件下,设计规则可以选择一种就抗电击穿来说最为可靠的结构。进行这项工作的基础是建立在大量已发表的有关TFEL系统工作的文献上的,尤其是那些基于等效电路模型的讨论。等效电路通常是在集中电参数的基础上发展起来的,即根 Preface This paper presents the design rules for determining the structure of an optimized thin film electroluminescent (TFEL) device from a design point of view, and gives the material properties (including the merit value of the luminescent material) and the drive capability of the semiconductor driver. This article also details the glow brightness of the gated pixels, the maximum drive voltage and current, and the permissible inhomogeneities due to the column electrode losses that can be provided to us, although the best set of film thicknesses can not be determined A set of restrictions. Under these constraints, the design rules can choose a structure that is most reliable against electrical breakdown. The basis for this work is based on a large number of published literature on the work of TFEL systems, especially those based on equivalent circuit models. Equivalent circuit is usually developed on the basis of the concentration of electrical parameters, that is, the root