分别考虑气相扩散和掩膜表面扩散过程,建立了金属有机化学气相沉积条件下横向外延过生长的速率模型.在砷化镓衬底上外延磷化铟条件下,模拟得到了生长速率随掩膜/窗口宽度(m/w)变化的关系.通过讨论掩膜/窗口宽度的影响,说明了掩膜宽度、窗口宽度以及有效掩膜宽度是决定生长速率的关键因素.以上结论与实验结果一致. Considering the vapor diffusion and mask surface diffusion processes respectively, a rate model of lateral epitaxial overgrowth under metalorganic chemical vapor deposition conditions was established.Under the condition of epitaxial indium phosphide on gallium arsenide substrate, the growth rate was simulated with the mask / Window width (m / w) .Through discussing the influence of mask / window width, it shows that the mask width, window width and effective mask width are the key factors that determine the growth rate.The above conclusions are consistent with the experimental results.