论文部分内容阅读
利用激光扫描共聚焦显微系统分别测量了CdSe/ZnS量子点在SiO2玻片表面、铟锡氧化物(ITO)纳米粒子表面和聚甲基丙烯酸甲酯(PMMA)薄膜表面上的荧光闪烁行为.研究发现,不同界面环境中量子点的亮态发光持续时间的概率密度都服从指数修正的幂律分布P(t)∝t-αexp(-t/μ).与处于SiO2玻片表面的情况相比,在ITO表面上的单量子点具有非常短暂的亮态发光持续时间,而在PMMA表面的单量子点亮态发光持续时间最长.这种荧光闪烁行为的不同主要归因于量子点与三种材料之间的界面电子转移特性.
The fluorescence scintillation behaviors of CdSe / ZnS quantum dots on the surface of SiO2 slide, the surface of indium tin oxide (ITO) nanoparticles and the surface of polymethylmethacrylate (PMMA) films were measured by laser scanning confocal microscopy. It is found that the probability density of bright state light-emitting duration of quantum dots in different interface environments obeys the power-law distribution P (t) αt-αexp (-t / μ) of exponential correction. , The single quantum dots on the ITO surface have a very brief bright state light emission duration, while the longest duration of the single quantum light state emission on the PMMA surface is the longest.The difference in this fluorescence scintillation behavior is mainly due to the quantum dot and Interface Electron Transfer Characteristics Between Three Materials.