Low Temperature Growth of Hydrogenated Silicon Prepared by PECVD from Argon Diluted Silane Plasma

来源 :晶体结构理论与应用(英文) | 被引量 : 0次 | 上传用户：dhy333

【摘要】

：

In order to contribute to the understanding of the optoelectronics properties of hydrogenated nanocrystalline silicon thin films, a detailed study has been cond

【作者】

：

Rachid Amrani Pascale Abboud L

【机构】

：

IES,LPCMME

【出处】

：

晶体结构理论与应用(英文)

【发表日期】

：

2012年3期

【关键词】

：

Silicon PECVD DEPOSITION Rate AMORPHOUS NANOCRYSTALLINE Transition ARGON Low Tem

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In order to contribute to the understanding of the optoelectronics properties of hydrogenated nanocrystalline silicon thin films, a detailed study has been conducted. The samples were deposited by 13.56 MHz PECVD (Plasma-Enhanced Chemical Vapor Deposition

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Low Temperature Growth of Hydrogenated Silicon Prepared by PECVD from Argon Diluted Silane Plasma

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