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用等离子体增强化学汽相沉积(PECVD)法,在玻璃和单晶Si衬底上分别制备了氢化纳米硅薄膜,对在相同工艺条件下的薄膜进行了对比研究,即用Raman散射谱研究了薄膜的晶粒平均大小和晶态比;用台阶仪测试了薄膜厚度;用X射线衍射谱和原子力显微镜对薄膜微结构和形貌进行了对比研究,发现所制备薄膜的微观结构有很大的差异。相同工艺条件下,在玻璃衬底上生长的薄膜,表面粗糙度小于单晶Si衬底上的薄膜,而晶化程度低于单晶Si衬底。掺杂使微结构发生了变化,掺P促进晶化,掺B促进非晶化,对此实验结果给出了定性的分析。
Hydrogenated nano-silicon films were prepared on glass and single-crystal Si substrates by plasma-enhanced chemical vapor deposition (PECVD) method, and the films under the same conditions were compared. The Raman scattering spectra The average grain size and crystallinity ratio of the films were measured. The thickness of the films was measured by a step-and-step method. The microstructures and morphologies of the films were compared by X-ray diffraction and atomic force microscopy. The microstructure of the films was found to be very large difference. Under the same process conditions, a thin film grown on a glass substrate has a lower surface roughness than a thin film on a single-crystal Si substrate but a lower degree of crystallization than a single-crystal Si substrate. Doping changes the microstructure, adding P to promote crystallization, B to promote amorphization, the experimental results give a qualitative analysis.