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本工作测量了升华外延碳化硅p-n结的电流-电压特性和空间电荷电容。通过对正向电流-电压特性及电容-电压特性的分析,表明:随着外延生长条件的不同,这种p-n结的结构可以在相当宽的范围内变化,从近于线性梯度结直到典型的p-i-n结,而大多数p-n结则介于这两者之间。文中就外延生长条件对p-n结结构的影响进行了简略的讨论。 此外,还给出了升华外延碳化硅p-n结正向电发光的亮度-电流关系、光谱分布以及脉冲和交流激励的测量结果。
This work measured the current-voltage characteristics and space charge capacitance of the sub-epitaxial silicon carbide p-n junction. The analysis of the forward current-voltage characteristic and the capacitance-voltage characteristic shows that the structure of this pn junction can vary within a relatively wide range as the epitaxial growth conditions vary from near linear gradient junction to the typical pin junction, while most pn junctions are in between. In this paper, the influence of epitaxial growth conditions on the structure of p-n junction is briefly discussed. In addition, the brightness-current relationship, spectral distribution, and measurement results of pulsed and AC excitation of sublimation epitaxial silicon carbide p-n junction are also given.