绪言碳化硅(以下简称SiC)半导体是在五十年代后期作为一种耐高温的半导体材料发展起来的。但由于受六十年代初世界性经济衰退的影响,一些与SiC耐高温特点有密切关系的远期发展项目的削减,使SiC的研究工作蒙受影响;而且SiC半导体材料和器件工艺的难度远远超过Ge、Si乃致GaAs。因此,在经过1973年的第三届SiC半导体国际会议以后,国际上对于SiC半导体的研究工作渐趋冷落。虽然如此,这方面的研究工作却从未中断过。近年来,对SiC基本性能参数有了更清楚的了解。它的最大反向击穿电场几乎是硅的十倍,饱和载流子漂移速度可达1.3—2.0×10~7cm/s,而热导率约为硅的三倍,砷化镓的十倍,再加上SiC固有的稳定和耐高温的优点,看来它在高频大功率器件方面颇有潜力,因而一直有人进行这方面的探 Introduction Silicon carbide (SiC) semiconductors developed as a high-temperature-resistant semiconductor material in the late 1950s. However, due to the global economic recession in the early 1960s, the reduction of some long-term development projects closely related to the high-temperature capability of SiC has affected the research work of SiC; and the difficulty of SiC semiconductor materials and device processes has been far Beyond Ge, Si is GaAs. Therefore, after the Third International Conference on SiC Semiconductor in 1973, the research work on SiC semiconductor in the world is getting cold and cold. Nevertheless, the research work in this area has never stopped. In recent years, the basic performance parameters of SiC have a clearer understanding. Its maximum reverse breakdown electric field is almost ten times that of silicon, saturated carrier drift up to 1.3-2.0 × 10 ~ 7cm / s, thermal conductivity is about three times that of silicon, and gallium arsenide ten times , Combined with the inherent stability and temperature resistance of SiC, seems to have potential for high-frequency, high-power devices and has been explored in this area