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在典型的多异质结器件ITO/NPB/CBP:Ir(ppy)3/Bphen/Alq3/LiF/Al的基础上,利用有机半导体掺杂技术,设计制备了单异质结-单发光层器件、单异质结-p-i-n结构器件、单异质结-双发光层器件及无异质结-混合主体结构器件,并对其光电性能进行了研究和比较.其中,单异质结-p-i-n结构器件的最大功率效率为32.1lm/W,是参考器件的3.1倍,寿命是参考器件的15倍.无异质结-混合主体结构器件的最大功率效率为37.2lm/W,是参考器件的3.5倍,其寿命是参考器件的46倍.研究结果表明,通过对载流子传输层和发光层的优化设计,构建电子、空穴传输平衡的载流子传输层和发光层,减少或取消异质结界面仍可以实现对载流子传输和复合的有效调控,从而使器件的发光效率和寿命同时得到提高.本研究将为高性能OLED的设计提供实验基础.
Based on ITO / NPB / CBP: Ir (ppy) 3 / Bphen / Alq3 / LiF / Al, a typical heterojunction device, a single heterojunction- , Single heterojunction-pin structure device, single heterojunction-double light emitting layer device and heterojunction-hybrid main structure device, and their photoelectric properties were studied and compared. Among them, the single heterojunction-pin structure The maximum power efficiency of the device is 32.1lm / W, which is 3.1 times the reference device and its lifetime is 15 times that of the reference device. The maximum power efficiency of a heterojunction-hybrid body device is 37.2lm / W, which is 3.5 Times the life expectancy of 46 times the reference device.The results show that through the carrier transport layer and the optimal design of the light-emitting layer, electron and hole transport balance to build the carrier transport layer and the light-emitting layer, reduce or cancel the difference The mass interface can still effectively control the carrier transport and recombination, so that the luminous efficiency and lifetime of the device can be improved at the same time.This study will provide the experimental basis for the design of high performance OLED.