论文部分内容阅读
针对专用高能量注入设备价格昂贵、维护成本高等问题,研究了一种基于二价、三价离子束流提升中低能设备能量上限的离子注入工艺。利用离化质量分析谱线分析了多价离子的筛选,介绍了元素沾污和能量沾污的工艺风险及其防治方法,设计了多价离子和单价离子注入的对比实验。结果表明,在注入到硅片的多价离子与单价离子总能量相等的条件下,二者注入结深一致,测试片的方块电阻差异仅为2.5%,验证了此工艺的可行性,以期达到充分发挥设备潜力、优化产品工艺的目的。
In view of the high cost of dedicated high energy injection equipment and high maintenance cost, an ion implantation process based on the bivalent and trivalent ion beams to increase the upper and lower energy limit of energy devices was studied. The separation of multivalent ions was analyzed by ionization mass spectrometry, the process risk of elemental staining and energy contamination was introduced, and the control methods were also discussed. The comparative experiments of multivalent ions and monovalent ion implantation were designed. The results show that the junction depth of the two is equal to the total energy of the monovalent ions implanted into the silicon wafer, and the difference of the sheet resistance of the test piece is only 2.5%, which proves the feasibility of the process in order to achieve Give full play to the potential of the equipment and optimize the process of the product.