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采用等离子体增强化学汽相沉积技术生长不同氧含量的氢化非晶氧化硅薄膜 (a SiOx∶H) ,离子注入铒及退火后在室温观察到很强的光致发光 .当材料中氧硅含量比约为 1和 1.76时 ,分别对应 77K和室温测量时最强的 1.5 4μm光致发光 .从 15到 2 5 0K的变温实验显示出三个不同的强度与温度变化关系 ,表明氢化非晶氧化硅中铒离子的能量激发和发光是一个复杂的过程 .提出氢化非晶氧化硅薄膜中发光铒离子来自于富氧区 ,并对实验现象进行了解释 .氢化非晶氧化硅中铒发光的温度淬灭效应很弱 .从 15到 2 5 0K ,光致发光强度减弱约 1/ 2 .
Hydrogenated amorphous silicon oxide films with different oxygen contents (a SiOx: H) were grown by plasma-enhanced chemical vapor deposition (PVDF), and strong photoluminescence was observed at room temperature after ion implantation of erbium and annealing.When the content of silicon oxide Ratio of about 1 and 1.76, respectively, corresponding to the strongest 1.54 μm photoluminescence at 77 K and room temperature measurements.Variation experiments from 15 to 250 K showed three different intensity versus temperature variations, indicating that hydrogenated amorphous oxide The energy excitation and luminescence of erbium ions in silicon are a complicated process. It is proposed that the luminescent erbium ions in the hydrogenated amorphous silicon oxide film come from the oxygen-rich region and the experimental phenomena are explained. The temperature of erbium luminescence in hydrogenated amorphous silicon oxide The quenching effect is weak. From 15 to 250 K, the photoluminescence intensity is reduced by about 1/2.