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本文首次报道了利用金属有机化学气相沉积(MOCVD)方法在GaAs衬底上生长的有序的Ga_(0.5)In_(0.5)P外延层的近红外光致发光的研究,并观测到深能级产生的三个发光峰,其峰值能量分别为 1.17,0.99和 0.85eV.根据它们的近红外发光光谱随着激发强度的变化关系,我们证实这些发光都是由于施主-受主对复合产生的发光.
This paper reports the first report of near-infrared photoluminescence of Ga_ (0.5) In_ (0.5) P epitaxial layers grown on GaAs substrates by metal-organic chemical vapor deposition (MOCVD) The resulting three luminescence peaks have peak energies of 1.17, 0.99 and 0.85eV, respectively.According to the variation of their near-infrared luminescence spectra as a function of the excitation intensity, we demonstrate that these luminescences are due to the luminescence generated by the donor- .