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利用等离子体浸没离子注入(PⅢ)的束发散角适中这一优点,我们在高深宽比的Si沟槽中进行了硼的保角掺杂。结染色后用扫描电镜(SEM)观察了深宽比达6:1的沟槽侧壁和底部的均匀掺杂P~+层。 为了试验这种保角掺杂技术的极限,用类似的PⅢ条件对用Si片制作的深宽比特别高的肉眼可见的沟槽模型(宽0.5mm,深12.5mm)进行注入,快速热退火后,用四探针法测定了沿沟槽顶部和侧壁的方块电阻。沟槽侧壁的平均方块电阻是顶部方块电阻的二倍左右。侧壁方块电阻与平均值相比的偏差为±60％。
Using the advantage of a moderate beam divergence angle for plasma immersion ion implantation (PIII), we performed conformal doping of boron in high aspect ratio Si trenches. The results show that the uniform doping P + layer on the sidewall and the bottom of the trench with the aspect ratio of 6: 1 is observed by scanning electron microscopy (SEM). In order to test the limits of this type of conformal doping technique, a similar high-pitched trench model (width 0.5 mm, depth 12.5 mm) made of Si wafer was used for the implantation with a high aspect ratio, rapid thermal annealing After that, the square resistance along the top and the sidewall of the trench was measured by the four-probe method. The average square resistance of the trench sidewalls is about twice the top square resistance. Sidewrap resistance deviation from the average is ± 60%.