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现有的大规模动态MOS读/写存贮器要求使用者周期地通过特定的地址序列循环来再生存贮的数据。这种要求使这些组件的有效性受到贬损,因为在再生时间内数据不能存取,而且使系统的外围构件增加,由于增加了产生复杂再生周期和与此有关的中断所必需的逻辑。
Existing large-scale dynamic MOS read / write memory requires users to periodically cycle through a specific address sequence to reproduce the stored data. This requirement derogates the effectiveness of these components because data can not be accessed during the regeneration time and the peripheral components of the system are increased due to the added logic necessary to create a complex regeneration cycle and associated interruptions.