An ultra-high voltage 4H-silicon carbide (SiC) gate tu-off (GTO) thyristor for low switching time is proposed and analyzed by numerical simulation.It features a double epitaxial p-base in which an extra electrical field is induced to enhance the transportation of the electrons in the thin p-base and reduce recombination.As a result,the tu-on characteristics are improved.What is more,to obtain a low tu-off loss,an alteating p+/n+ region formed in the backside acts as the anode in the GTO thyristor.Consequently,another path formed by the reverse-biased n+-p junction accelerates the fast removal of excess electrons during tu-off.This work demonstrates that the tu-on time and tu-off time of the new structure are reduced to 37 ns and 783.1 ns,respectively,under a bus voltage of 8000 V and load current of 100 A/cm2.