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本文对测试的LDD结构BV_(DS)和低级击穿电压进行了分析。结果表明,BV_(DS)与低级击穿电压的机理完全不一样,常规MOSFET的衬底电流解析式应用于LDD MOSFET时需要进行修正。
In this paper, the tested LDD structure BV_ (DS) and low breakdown voltage were analyzed. The results show that the mechanism of BV_ (DS) is quite different from that of lower breakdown voltage, and the conventional MOSFET substrate current analytical method needs to be modified when applied to LDD MOSFETs.