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一、前言有机金属化合物化学气相沉积法简称MOCVD法(Metal Organic Chemical Vapor Deposition)或有机金属化合物气相外延法(Metal Organic Vapor Phase Epitaxy)简称MOVPE或OMVPE法。它是把反应物质全部以有机金属化合物的气体分子形式,用H_2气作载带气体送到反应室,进行热分解反应而形成化合物半导体的一种新技术。由于它用控制气体流量的方法,容易改变化合物的组成及掺杂浓度,同时所用的设备比较简单,生长速度快,周期短,而且有可能进行批量生产。目前,在半导体器件工艺中开始应用和受到重视。
I. Introduction Organometallic chemical vapor deposition is abbreviated as Metal Organic Chemical Vapor Deposition or Metal Organic Vapor Phase Epitaxy (MOVPE or OMVPE) for short. It is the reaction of substances all organometallic compounds in the form of gas molecules, with H 2 gas as carrier gas sent to the reaction chamber, the thermal decomposition reaction to form a compound semiconductor a new technology. Because of its ability to control the flow of gas, it is easy to change the composition and doping concentration of the compounds, with simpler equipment, faster growth rates, shorter cycles and the possibility of mass production. At present, the application of the semiconductor device technology and attention.