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Ⅲ-Ⅴ族氮化物半导体可以用来制作发光器件。为了在异质结构器件中提供所需要的带隙和能带偏移范围,必须生长InGaN膜层。但是用诸如金属有机化
Group III-V nitride semiconductors can be used to fabricate light-emitting devices. In order to provide the required band gap and band offset range in a heterostructure device, an InGaN film must be grown. But with organic metal such as