论文部分内容阅读
,Effects of Ⅴ/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer
【作 者】
：
【机 构】
：
Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semicon
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2014年2期
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