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报道了0.5μm工艺千瓦级GaN HEMT器件在P波段应用。通过采用AlN插入层,大幅降低了器件在大功率工作时的漏电,同时大幅提高器件输出功率密度。同时通过对背势垒结构缓冲层的优化,提高了器件击穿电压,从而提高器件抗失配比(VSWR)至5∶1。GaN HEMT器件设计采用双场板结构,采用0.5μm栅长工艺制作。器件工作电压为50V,在P波段峰值输出功率1 500 W,漏极效率72%。
Reported the 0.5μm process kilowatt GaN HEMT devices in P-band applications. Through the use of AlN insertion layer, drastically reduces the device leakage in high-power operation, while significantly increasing the device output power density. At the same time, by optimizing the buffer layer structure of the back barrier, the breakdown voltage of the device is increased, thereby increasing the device anti-mismatch ratio (VSWR) to 5: 1. GaN HEMT devices are designed with dual-field plate structure, using 0.5μm gate length process. Operating voltage of the device 50V, peak output power in the P-band 1 500 W, the drain efficiency of 72%.