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本文叙述利用液封法研制Ga_xIn_(1-x)As单晶的工艺和这种单晶的电学特性.三元合金料用直接合成法制备.拉晶速度为每小时3毫米左右.研制的三元单晶的组分为0.92≤x<1.组分沿单晶的长度方向分布比较均匀.Ga在Ga_xIn_(1-x)As单晶中的分凝系数大于1,并随合金熔体中Ga组元含量降低而增加.室温下Ga_xIn_(1-x)As单晶的载流子浓度和电子迁移率分别为n(?)10~(15)cm~(-3)和μ=4～6×10~3cm~2/V·s.最后讨论了合金散射和晶格失配对晶体性质的影响.
This paper describes the process of the liquid-sealed Ga_xIn_ (1-x) As crystal and the electrical properties of this single crystal.The ternary alloy material is prepared by the direct synthesis method.The pulling speed is about 3 mm per hour.The developed three The composition of the monocrystal is 0.92≤x <1. The components are distributed uniformly along the length of the single crystal. The segregation coefficient of Ga in Ga_xIn_ (1-x) As single crystal is more than 1, (Subscript x) 10 ~ (15) cm ~ (-3) and μ = 4 ~ (subscript 3), respectively, for Ga_xIn_ (1-x) As single crystal at room temperature. 6 × 10 ~ 3cm ~ 2 / V · s.Finally, the effects of the alloy scattering and lattice mismatch on the crystal properties are discussed.